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tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3bj forward-conducting unidirectional thyristor overvoltage protectors product information 1 january 1998 - revised october 2000 copyright ? 2000, power innovations limited, u k information is current as of publication date. products conform to specifications in accordance with the terms of power innovations standard warranty. production processing does not necessarily include testing of all parameters . telecommunication system high current overvoltage protector s a bourns compan y l analogue line card and isdn protection - analogue slic - isdn u interface - isdn power suppl y l 8 kv 10/700, 20 0 a 5/310 itu-t k.20/21 ratin g l ion-implanted breakdown region precise and stable voltage low voltage overshoot under surg e l rated for international surge wave shape s devic e v dr m minimum v v (bo ) maximum v ?507 0 -5 8 -7 0 ?508 0 -6 5 -8 0 ?511 0 -8 0 -11 0 ?511 5 -9 0 -11 5 ?515 0 -12 0 -15 0 wave shap e standar d i ts p a 2/1 0 s gr-1089-cor e 50 0 8/2 0 s ansi c62.4 1 30 0 10/16 0 s fcc part 6 8 25 0 10/70 0 s itu-t k.20/2 1 20 0 10/56 0 s fcc part 6 8 16 0 10/100 0 s gr-1089-cor e 10 0 l ................. ul recognized componen t descriptio n these devices are designed to limit overvoltages on the telephone and data lines. overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typically used for the protection of isdn power supply feeds. two devices, one for the ring output and the other for the tip output, will provide protection for single supply analogue slics. a combination of three devices will give a low capacitance protector network for the 3-point protection of isdn lines. the protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. negative overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides. positive overvoltages are limited by the conduction of the anti-parallel diode . how to orde r devic e packag e carrie r order a s tisp5xxxh3b j bj (j-bend do-214aa/smb ) embossed tape reele d tisp5xxxh3bj r bulk pac k tisp5xxxh3b j insert xxx value corresponding to protection voltages of 070, 080, 110, 115 and 150 . device symbo l sd5xab 2 1 1 2 smbj package (top view) mdxxbgb
tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3b j forward-conductin g unidirectional thyristor overvoltage protector s 2 january 1998 - revised october 200 0 product information this tisp5xxxh3bj range consists of five voltage variants to meet various maximum system voltage levels (5 8 v to 12 0 v). they are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. these high (h) current protection devices are in a plastic package smbj (jedec do-214aa with j-bend leads) and supplied in embossed carrier reel pack. absolute maximum ratings , t a = 2 5 c (unless otherwise noted ) ratin g symbo l valu e uni t repetitive peak off-state voltage, (see note 1 ) ?5070 ?5080 ?5110 ?5115 ?5150 v dr m - 58 - 65 - 80 -90 -12 0 v non-repetitive peak on-state pulse current(see notes 2, 3 and 4 ) i ts p a 2/1 0 s(gr-1089-core, 2/1 0 s voltage wave shape ) 50 0 8/2 0 s(iec 61000-4-5, 1.2/5 0 s voltage, 8/20 current combination wave generator ) 30 0 10/16 0 s(fcc part 68, 10/16 0 s voltage wave shape ) 25 0 5/20 0 s(vde 0433, 10/70 0 s voltage wave shape ) 22 0 0.2/31 0 s(i3124, 0.5/70 0 s voltage wave shape ) 20 0 5/31 0 s(itu-t k.20/21, 10/70 0 s voltage wave shape ) 20 0 5/31 0 s(ftz r12, 10/70 0 s voltage wave shape ) 20 0 10/56 0 s(fcc part 68, 10/56 0 s voltage wave shape ) 16 0 10/100 0 s(gr-1089-core, 10/100 0 s voltage wave shape ) 10 0 non-repetitive peak on-state current(see notes 2, 3 and 5 ) i ts m 55 60 2. 1 a 2 0 ms (5 0 hz) full sine wave 16. 7 ms (6 0 hz) full sine wave 100 0 s 5 0 hz/6 0 hz a.c . initial rate of rise of on-state current,exponential current ramp, maximum ramp value < 140 a d i t /d t 40 0 a/ s junction temperatur e t j -40 to +15 0 c storage temperature rang e t st g -65 to +15 0 c notes: 1. see figure 9 for voltage values at lower temperatures . 2. initially the tisp5xxxh3bj must be in thermal equilibrium with t j = 2 5 c. 3. the surge may be repeated after the tisp5xxxh3bj returns to its initial conditions . 4. see figure 10 for current ratings at other temperatures . 5. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. see figure 8 for the current ratings at other durations. derate current values at -0.6 1 %/c for ambient temperatures above 2 5 c electrical characteristics for terminal pair, t a = 2 5 c (unless otherwise noted ) paramete r test condition s mi n ty p ma x uni t i dr m repetitive peak off- state curren t v d = v dr m t a = 2 5 c t a = 8 5 c -5 -1 0 a v (bo ) breakover voltag e dv/d t = -75 0 v/ms, r sourc e = 30 0 w ?5070 ?5080 ?5110 ?5115 ?5150 -70 -80 -110 -115 -15 0 v v (bo ) impulse breakover voltag e dv/d t 3 -100 0 v/s, linear voltage ramp, maximum ramp valu e = -50 0 v di/d t = -2 0 a/s, linear current ramp, maximum ramp valu e = -1 0 a ?5070 ?5080 ?5110 ?5115 ?5150 -80 -90 -120 -125 -16 0 v i (b o ) breakover curren t dv/d t = -75 0 v/ms, r sourc e = 30 0 w -0.1 5 -0. 6 a
product information 3 january 1998 - revised october 2000 tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3bj forward-conducting unidirectional thyristor overvoltage protectors v f forward voltag e i f = 5 a, t w = 50 0 s ?5070 thru ?5150 3 v v fr m peak forward recovery voltag e dv/d t +100 0 v/s, linear voltage ramp, maximum ramp valu e = +50 0 v di/d t = +2 0 a/s, linear current ramp, maximum ramp valu e = +1 0 a ?5070 thru ?5150 5 v v t on-state voltag e i t = - 5 a, t w = 50 0 s - 3 v i h holding curren t i t = - 5 a, di/d t = +3 0 ma/m s -0.1 5 -0. 6 a dv/d t critical rate of rise of off-state voltag e linear voltage ramp, maximum ramp valu e < 0.85 v dr m - 5 kv/ s i d off-state curren t v d = -5 0 v t a = 8 5 c -1 0 a c of f off-state capacitanc e f = 10 0 khz, v d = 1 vrms, v d = -1v, (see note 6) f = 10 0 khz, v d = 1 vrms, v d = - 2 v f = 10 0 khz, v d = 1 vrms, v d = -5 0 v f = 10 0 khz, v d = 1 vrms, v d = -10 0 v ?5070 ?5080 ?5110 ?5115 ?5150 ?5070 ?5080 ?5110 ?5115 ?5150 ?5070 ?5080 ?5110 ?5115 ?5150 ?5150 300 280 240 214 140 260 245 205 180 120 90 80 65 56 35 3 0 420 390 335 300 195 365 345 285 250 170 125 110 90 80 50 4 0 p f note 6: up to 1 0 mhz the capacitance is essentially independent of frequency. above 1 0 mhz the effective capacitance is strongly dependent on connection inductance . thermal characteristic s paramete r test condition s mi n ty p ma x uni t r q j a junction to free air thermal resistanc e eia/jesd51-3 pcb, i t = i tsm(1000 ) , t a = 2 5 c, (see note 7 ) 11 3 c/ w 26 5 mm x 21 0 mm populated line card, 4-layer pcb, i t = i tsm(1000 ) , t a = 2 5 c 5 0 note 7: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths . electrical characteristics for terminal pair, t a = 2 5 c (unless otherwise noted ) (continued ) paramete r test condition s mi n ty p ma x uni t
tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3b j forward-conductin g unidirectional thyristor overvoltage protector s 4 january 1998 - revised october 200 0 product information parameter measurement informatio n figure 1. voltage-current characteristic for terminal pai r all measurements are referenced to terminal 1 -v v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i forward conduction characteristic +v +i i f v f i tsm i tsp -i quadrant iii switching characteristic pmxxaca
product information 5 january 1998 - revised october 2000 tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3bj forward-conducting unidirectional thyristor overvoltage protectors typical characteristic s figure 2. figure 3. figure 4. figure 5. off-state current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - o f f - s t a t e c u r r e n t - a 0001 001 01 1 10 100 tc5xafa v d = -50 v normalised breakover voltage vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 n o r m a l i s e d b r e a k o v e r v o l t a g e 0.95 1.00 1.05 1.10 tc5xaia on-state and forward currents vs on-state and forward voltages v t , v f - on-state voltage, forward voltage - v 0.7 1.5 2 3 4 5 7 1 10 i t , i f - on-state current, forward current - a 1.5 2 3 4 5 7 15 20 30 40 50 70 150 200 1 10 100 t a = 25 c t w = 100 s tc5lac v t v f normalised holding current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 n o r m a l i s e d h o l d i n g c u r r e n t 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc5xad
tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3b j forward-conductin g unidirectional thyristor overvoltage protector s 6 january 1998 - revised october 200 0 product information typical characteristic s figure 6. figure 7. off-state capacitance vs off-state voltage v d - negative off-state voltage - v 1 2 3 5 10 20 30 50 100 c o f f - c a p a c i t a n c e - p f 20 30 40 50 60 70 80 90 150 200 300 100 t j = 25c v d = 1 vrms tc5xaba '5150 '5110 '5080 '5070 '5115 differential off-state capacitance vs rated repetitive peak off-state voltage v drm - negative repetitive peak off-state voltage - v 58 65 80 90 120 d d c - d i f f e r e n t i a l o f f - s t a t e c a p a c i t a n c e - p f 80 90 100 110 120 130 140 150 160 170 180 190 d d c = c off(-2 v) - c off(-50 v) tc5xaea ' 5 1 5 0 ' 5 1 1 0 ' 5 0 7 0 ' 5 0 8 0 ' 5 1 1 5
product information 7 january 1998 - revised october 2000 tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3bj forward-conducting unidirectional thyristor overvoltage protectors rating and thermal informatio n figure 8. figure 9. figure 10. non-repetitive peak on-state current vs current duration t - current duration - s 01 1 10 100 1000 i t s m ( t ) - n o n - r e p e t i t i v e p e a k o n - s t a t e c u r r e n t - a 1.5 2 3 4 5 6 7 8 9 15 20 30 10 ti5hac v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c ti5xad v drm derating factor t amin - minimum ambient temperature - c -35 -25 -15 -5 5 15 25 -40 -30 -20 -10 0 10 20 d e r a t i n g f a c t o r 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 vs minimum ambient temperature impulse rating vs ambient temperature t a - ambient temperature - c -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 i m p u l s e c u r r e n t - a 80 90 100 120 150 200 250 300 400 500 600 700 iec 1.2/50, 8/20 itu-t 10/700 fcc 10/560 bellcore 2/10 bellcore 10/1000 fcc 10/160 tc5xaa
tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3b j forward-conductin g unidirectional thyristor overvoltage protector s 8 january 1998 - revised october 200 0 product information applications informatio n deploymen t these devices are two terminal overvoltage protectors. they may be used either singly to limit the voltage between two points ( figure 1 1 ) or in multiples to limit the voltage at several points in a circuit ( figure 1 2 ) . in figure 1 1 , the tisp5xxxh3bj limits the maximum voltage of the negative supply to - v (bo ) and + v f . this configuration can be used for protecting circuits where the voltage polarity does not reverse in normal operation. in figure 1 2 , the two tisp5xxxh3bj protectors, th4 and th5, limit the maximum voltage of the slic (subscriber line interface circuit) outputs to - v (bo ) and + v f . ring and test protection is given by protectors th1, th2 and th3. protectors th1 and th2 limit the maximum tip and ring wire voltages to the v (bo ) of the individual protector. protector th3 limits the maximum voltage between the two conductors to its v (bo ) value. if the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector th3 is not required . figure 11. power supply protectio n figure 12. line card slic protectio n ai4xac signal d.c. - r1a r1b tisp5xxxh3bj test relay ring relay slic relay test equip- ment ring generator s1a s1b r1a r1b ring wire tip wire th1 th2 th3 slic slic protection tisp5xxxh3bj ring/test protection over- current protection s2a s2b s3a s3b v bat ai4xaa th4 th5
product information 9 january 1998 - revised october 2000 tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3bj forward-conducting unidirectional thyristor overvoltage protectors broad-band protection . the star-connection of three tisp5xxxh3bj protectors gives a protection circuit which has a low differential capacitance to ground ( figure 1 3 ). this example, a -100 v isdn line is protected. in figure 1 3 , the circuit illustration a shows that protector th1 will be forward biased as it is connected to the most negative potential. the other two protectors, th2 and th3 will be reverse biased as protector th1 will pull their common connection to within 0. 5 v of the negative voltage supply . illustration b shows the equivalent capacitances of the two reverse biased protectors (th2 and th3) as 2 9 pf each and the capacitance of the forward biased protector (th1) as 60 0 pf. illustration c shows the delta equivalent of the star capacitances of illustration b. the protector circuit differential capacitance will be 26 - 1 = 2 5 pf. in this circuit, the differential capacitance value cannot exceed the capacitance value of the ground protector (th3) . a bridge circuit can be used for low capacitance differential. whatever the potential of the ring and tip conductors are in figure 1 4 , the array of steering diodes, d1 through to d6, ensure that terminal 1 of protector th1 is always positive with respect to terminal 2. the protection voltage will be the sum of the protector th1, v (bo ) , and the forward voltage of the appropriate series diodes. it is important to select the correct diodes. diodes d3 through to d6 divert the currents from the ring and tip lines. diodes d1 and d2 will carry the sum of the ring and tip currents and so conduct twice the current of the other four diodes. the diodes need to be specified for forward recovery voltage, v fr m , under the expected impulse conditions. (some conventional a.c. rectifiers can produce as much as 7 0 v of forward recovery voltage, which would be an extra 14 0 v added to the v (bo ) of th1). in principle the bridge circuit can be extended to protect more than two conductors by adding extra legs to the bridge . figure 13. isdn low capacitance u-interface protectio n figure 14. low capacitance bridge protection circui t ai4xab c -99.5 v th1 th2 th3 signal c -99.5 v c 0.5 v 600 pf 29 pf 29 pf 26 pf 1 pf 26 pf a) star-connected u-interface protector b) equivalent tisp5150h3bj capacitances c) delta equivalent shows 25 pf line unbalance - 100 v - 100 v - 100 v th1 ring ai5xac d1 d2 d3 d4 d5 d6 tip 1 2
tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3b j forward-conductin g unidirectional thyristor overvoltage protector s 1 0 january 1998 - revised october 200 0 product information isdn device selectio n the etsi technical report etr 080:1993 defines several range values in terms of maximum and minimum isdn feeding voltages. the following table shows that ranges 1 and 2 can use a tisp5110h3bj protector and ranges 3 to 5 can use a tisp5150h3bj protector . impulse testin g to verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. the table below shows some common values . if the impulse generator current exceeds the protectors current rating then a series resistance can be used to reduce the current to the protectors rated value and so prevent possible failure. the required value of series resistance for a given waveform is given by the following calculations. first, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the protectors rated current. the impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. in some cases the equipment will require verification over a temperature range. by using the rated waveform values from figure 1 0 , the appropriate series resistor value can be calculated for ambient temperatures in the range of -4 0 c to 8 5 c . if the devices are used in a star-connection, then the ground return protector, th3 in figure 1 3 , will conduct the combined current of protectors th1 and th2. similarly in the bridge connection ( figure 1 4 ), the protector th1 must be rated for the sum of the conductor currents. in these cases, it may be necessary to include some series resistance in the conductor feed to reduce the impulse current to within the protectors ratings. a.c. power testin g the protector can withstand currents applied for times not exceeding those shown in figure 8 . currents that exceed these times must be terminated or reduced to avoid protector failure. fuses, ptc (positive temperature coefficient) resistors and fusible resistors are overcurrent protection devices which can be used rang e feeding voltag e standoff voltage v drm v device # minimum v maximum v 1 5 1 6 9 -8 0 tisp5110h3b j 2 6 6 7 0 3 9 1 9 9 -12 0 tisp5150h3b j 4 9 0 11 0 5 10 5 11 5 standar d peak voltage setting v voltage wave form s peak current value a current wave form s tisp5xxxh3 2 5 c rating a series resistance w gr-1089-cor e 250 0 2/1 0 50 0 2/1 0 50 0 0 100 0 10/100 0 10 0 10/100 0 10 0 fcc part 6 8 (march 1998 ) 150 0 10/16 0 20 0 10/16 0 25 0 0 80 0 10/56 0 10 0 10/56 0 16 0 0 150 0 9/72 0 ? 37. 5 5/32 0 ? 20 0 0 100 0 9/72 0 ? 2 5 5/32 0 ? 20 0 0 i312 4 150 0 0.5/70 0 37. 5 0.2/31 0 20 0 0 itu-t k.20/k.2 1 1500 400 0 10/70 0 37.5 10 0 5/31 0 20 0 0 ? fcc part 68 terminology for the waveforms produced by the itu-t recommendation k.21 10/700 impulse generato r
product information 11 january 1998 - revised october 2000 tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3bj forward-conducting unidirectional thyristor overvoltage protectors to reduce the current flow. protective fuses may range from a few hundred milliamperes to one ampere. in some cases it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. the current versus time characteristic of the overcurrent protector must be below the line shown in figure 8 . in some cases there may be a further time limit imposed by the test standard (e.g. ul 1459 wiring simulator failure) . capacitanc e the protector characteristic off-state capacitance values are given for d.c. bias voltage, v d , values of - 1 v, - 2 v and -5 0 v. the tisp5150h3bj is also given for a bias of -10 0 v. values for other voltages may be determined from figure 6 . up to 1 0 mhz the capacitance is essentially independent of frequency. above 1 0 mhz the effective capacitance is strongly dependent on connection inductance. in figure 1 2 , the typical conductor bias voltages will be about - 2 v and -5 0 v. figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at - 2 v and the other at -5 0 v. for example, the tisp5070h3bj has a differential capacitance value of 16 6 pf under these conditions . normal system voltage level s the protector should not clip or limit the voltages that occur in normal system operation. figure 9 allows the calculation of the protector v dr m value at temperatures below 2 5 c. the calculated value should not be less than the maximum normal system voltages. the tisp5150h3bj, with a v dr m of -12 0 v, can be used to protect isdn feed voltages having maximum values of -9 9 v, -11 0 v and -11 5 v (range 3 through to range 5). these three range voltages represent 0.83 (99/120), 0.92 (110/120) and 0.96 (115/120) of the -12 0 v tisp5150h3bj v dr m . figure 9 shows that the v dr m will have decreased to 0.944 of its 2 5 c value at -4 0 c. thus the supply feed voltages of -9 9 v (0.83) and -11 0 v (0.92) will not be clipped at temperatures down to -4 0 c. the -11 5 v (0.96) feed supply may be clipped if the ambient temperature falls below -2 1 c. jesd51 thermal measurement metho d to standardise thermal measurements, the eia (electronic industries alliance) has created the jesd51 standard. part 2 of the standard (jesd51-2, 1995) describes the test environment. this is a 0.028 3 m 3 ( 1 f t 3 ) cube which contains the test pcb (printed circuit board) horizontally mounted at the centre. part 3 of the standard (jesd51-3, 1996) defines two test pcbs for surface mount components; one for packages smaller than 2 7 mm on a side and the other for packages up to 4 8 mm. the smbj measurements used the smaller 76. 2 mm x 114. 3 mm (3. 0 ? x 4. 5 ?) pcb. the jesd51-3 pcbs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. the pcbs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the jesd51 values .
tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3b j forward-conductin g unidirectional thyristor overvoltage protector s 1 2 january 1998 - revised october 200 0 product information mechanical dat a recommended printed wiring footprint . device symbolization cod e devices will be coded as below. terminal 1 is identified by a bar index mark . carrier informatio n the carrier for production quantities is embossed tape reel pack. evaluation quantities will be shipped in the most practical carrier. devic e symbolization cod e tisp5070h3b j 5070h 3 tisp5080h3b j 5080h 3 tisp5110h3b j 5110h 3 tisp5115h3b j 5115h 3 tisp5150h3b j 5150h 3 carrie r order # embossed tape reel pack (3000 devices are on a reel ) tisp5xxxh3bj r smb pad size all linear dimensions in millimeters 2.40 2.16 2.54 mdxxbi
product information 13 january 1998 - revised october 2000 tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3bj forward-conducting unidirectional thyristor overvoltage protectors mechanical dat a smbj (do-214aa ) plastic surface mount diode packag e this surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly . smb all linear dimensions in millimeters mdxxbha 5,59 5,21 2,40 2,00 2,10 1,90 1,52 0,76 4,57 4,06 3,94 3,30 2 index mark (if needed) 2,32 1,96 0,20 0,10
tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3b j forward-conductin g unidirectional thyristor overvoltage protector s 1 4 january 1998 - revised october 200 0 product information mechanical dat a tape dimension s smb package single-sprocket tape all linear dimensions in millimeters direction of feed 0,40 max. 4,5 max. 0 min. 12,30 11,70 1,65 1,55 4,10 3,90 2,05 1,95 ? 1,5 min. 7,90 8,10 embossment carrier tape 5,55 5,45 1,85 1,65 cover tape 8,20 max. notes: a. the clearance between the component and the cavity must be within 0,05 mm min. to 0,65 mm max. so that the component cannot rotate more than 20 within the determined cavity. b. taped devices are supplied on a reel of the following dimensions:- reel diameter: 330 3,0 mm reel hub diameter 75 mm min. reel axial hole: 13,0 0,5 mm c. 3000 devices are on a reel. mdxxbj 20 typical component cavity centre line maximium component rotation typical component centre line index mark
product information 15 january 1998 - revised october 2000 tisp5070h3bj, tisp5080h3bj, tisp5110h3bj, TISP5115H3BJ, tisp5150h3bj forward-conducting unidirectional thyristor overvoltage protectors important notic e power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current . pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support th is warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements . pi assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. pi semiconductor products are not designed, intended, authorised, or warranted to be suitable for use in life-support applications, devices or systems . copyright ? 2000, power innovations limite d

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